TULAGA FAAVAE O LE ZW SERIES WELDING DIODE
O faʻamatalaga masani na faʻaaogaina e Jiangsu Yangjie Runau Semiconductor Co i le gaosiga o le diode uelo o loʻo mulimuli mai:
1. GB/T 4023—1997 Masini Tu'ufa'atasi O Masini Semiconductor Ma Lisi Fa'atasi Vaega 2: Diodes Fa'asa'o
2. GB/T 4937—1995 Metotia Su'ega Fa'ainisinia ma le Tau mo Masini Semiconductor
3. JB/T 2423—1999 Mea Fa'atonu Semiconductor - Metotia Fa'ata'ita'iga
4. JB/T 4277—1996 Fa'apipi'i Mea Fa'atonu Semiconductor
5. JB/T 7624—1994 Metotia Su'ega Diode Rectifier
Fa'ata'ita'iga ma le Tele
1. Igoa faʻataʻitaʻiga: O le faʻataʻitaʻiga o le diode uelo e faasino i tulafono faatonutonu a JB / T 2423-1999, ma o le uiga o vaega taʻitasi o le faʻataʻitaʻiga o loʻo faʻaalia i le Ata 1 i lalo:
2. Fa'ailoga fa'akalafi ma fa'ailoga (sub) fa'ailoa
O fa'ailoga fa'akomepiuta ma fa'ailoga fa'ailoga o lo'o fa'aalia i le Ata 2, o lo'o fa'asino le aū i le pito o le cathode.
3. Faʻailoga ma faʻapipiʻi fua
O foliga o le diode uelo o le convex ma le ituaiga tisiketi, ma o le foliga ma le tele e tatau ona fetaui ma manaoga o le Ata 3 ma le Laulau 1.
| Aitema | Fua (mm) | ||
| ZW7100 | ZW12000 | ZW16000/ZW18000 | |
| Cathode flange (Dmax) | 61 | 76 | 102 |
| Cathode ma anode Mesa(D1) | 44±0.2 | 57±0.2 | 68±0.2 |
| Max le lautele o mama sima(D2maualuga) | 55.5 | 71.5 | 90 |
| Aofa'i mafiafia (A) | 8±1 | 8±1 | 13±2 |
| Mauga tulaga pu | Diamita o le pu:φ3.5±0.2mm, loloto ole pu: 1.5±0.3mm | ||
| Fa'aaliga: fa'amatalaga au'ili'ili ma le tele fa'amolemole fa'afeso'ota'i | |||
Fa'ailoga ma uiga
1. Tulaga fa'amau
O le fa'asologa o le fa'asolosolo fa'asolosolo peak voltage (VRRM) e pei ona fa'ailoa mai i le Laulau 2
Fuafuaga 2 Voltage Level
| VRRM（V） | 200 | 400 |
| Tulaga | 02 | 04 |
2. Faatapulaa tau
Fa'atapula'a tau e tatau ona ogatasi ma le Fuafuaga 3 ma fa'aoga ile vaega atoa ole vevela ole fa'agaioiga.
Laulau 3 Tapulaa Tau
| Faatapulaa le Tau | Faailoga | Vaega | Taua | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Pusa vevela | Tcase | ℃ | -40～85 | |||
| E tutusa le vevela o feso'ota'iga (max) | T（vj） | ℃ | 170 | |||
| Teuga vevela | Tstg | ℃ | -40～170 | |||
| Volosa fa'afo'i pito i luga faifaipea (max) | VRRM | V | 200/400 | 200/400 | 200/400 | 200/400 |
| Toe fesuia'i e le toe ta'ua peale voltage (max | VRSM | V | 300/450 | 300/450 | 300/450 | 300/450 |
| Fa'asolo i luma averesi (max) | IF(AV) | A | 7100 | 12000 | 16000 | 18000 |
| Fa'asolo i luma (e le toe fai) si'isi'i i le taimi nei (max) | IFSM | A | 55000 | 85000 | 120000 | 135000 |
| I²t (maualuga) | I²t | kA²s | 15100 | 36100 | 72000 | 91000 |
| Malosi fa'apipi'i | F | kN | 22–24 | 30–35 | 45–50 | 52～57 |
3. Tulaga taua
Fuafuaga 4 Tulaga maualuga uiga
| Uiga ma tulaga | Faailoga | Vaega | Taua | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| I luma pito maualuga voltageIFM=5000A, Tj=25℃ | VFM | V | 1.1 | 1.08 | 1.06 | 1.05 |
| Toe fesuia'i pea peak currentTj=25℃, Tj=170℃ | IRRM | mA | 50 | 60 | 60 | 80 |
| Tete'e vevela Feso'ota'i-i-mataupu | Rjc | ℃/ W | 0.01 | 0.006 | 0.004 | 0.004 |
| Fa'aaliga: mo mana'oga fa'apitoa fa'amolemole fa'afeso'ota'i | ||||||
O lediode uelogaosia e Jiangsu Yangjie Runau Semiconductor o loʻo faʻaaogaina lautele i le teteʻe uelo, feololo ma le maualuga faʻasolosolo masini e oʻo atu i le 2000Hz poʻo luga.Faʻatasi ai ma se eletise pito i luma pito i luma, ultra-low thermal resistance, tulaga o tekinolosi gaosiga, sili ona lelei suiga ma faʻatinoga mautu mo tagata faʻaoga i le lalolagi, o le diode uelo mai Jiangsu Yangjie Runau Semiconductor o le tasi lea o masini sili ona faatuatuaina o le mana Saina. oloa semiconductor.