Press-Pack IGBT
Osi fa'asalalau IGBT (IEGT)
| ITIGA | VDRM V | VRRM V | IT(AV)@80℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Fa'aaliga:D- ma le dvaega iode, A-leai se vaega diode
I le masani ai, o le fa'afeso'ota'i solder modules IGBT na fa'aogaina i le kiki o le fa'aogaina o le DC fe'avea'i.O le pusa module e tasi le itu vevela dissipation.Ole malosi ole masini e fa'atapula'aina ma e le talafeagai ona fa'afeso'ota'i fa'asologa, leaga le olaga i le ea masima, leaga vibration anti-te'i po'o vevela vaivai.
O le ituaiga fou lomitusi-faafesootaʻi maualuga-mana lomitusi-pack IGBT masini e le gata e foia atoatoa faafitauli o le avanoa i soldering faagasologa, vevela vaivai o soldering mea ma maualalo le lelei o le tasi itu-itu vevela dissipation ae aveesea foi le vevela tetee i le va o vaega eseese, faaitiitia le tele ma le mamafa.Ma faʻaleleia atili le galue lelei ma le faʻamaoni o le IGBT masini.E manaia tele e fa'amalieina le mana-maualuga, maualuga-voltage, maualuga-fa'atuatuaina mana'oga o le fa'aogaina o le fa'aogaina o le DC.
Ole suiga ole ituaiga fa'afeso'ota'i solder ile lomitusi-pack IGBT e taua tele.
Talu mai le 2010, na fa'amanino atili ai le Runau Electronics e atia'e se masini lomitusi fou IGBT ma fa'amanuiaina le gaosiga i le 2013. Na fa'amaonia le fa'atinoga e ala i fa'ailoga a le atunu'u ma fa'amae'a ai le fa'atinoga.
Ole taimi nei e mafai ona tatou gaosia ma tu'uina atu fa'asologa lolomi-pack IGBT ole IC laina ile 600A i le 3000A ma VCES laina ile 1700V i le 6500V.O se vaaiga matagofie o lomitusi-pack IGBT faia i Saina e faaaoga i Saina fetuutuunai DC transmission system ua matua faamoemoeina ma o le a avea ma se isi maa vase lalolagi lalolagi o Saina malosiaga faaeletonika alamanuia pe a uma nofoaafi eletise televave.
Fa'atomuaga Puupuu o Faiga Fa'apitoa:
1. Faiga: Fa'asalalau-fa'amau IGBT CSG07E1700
●Uiga eletise pe a uma ona afifi ma oomi
● Toe foʻitutusafesootaivave toe fa'aleleia diodefaaiuina
● Parameter:
Tau fa'atatau(25℃)
a.A'oa'i Emitter Voltage: VGES=1700（V）
e.Faitotoa Emitter Voltage: VCES=±20（V）
i.Aoina mai le taimi nei: IC=800（A）ICP=1600（A）
o.Fa'ate'a le Malosi a le tagata aoina: PC=4440（W）
u.Galulue vevela vevela: Tj=－20~125℃
f.Teuga vevela: Tstg=－40~125℃
Fa'ailoa: o le a fa'aleagaina le masini pe a sili atu le tau fa'atatau
EletiseCfa'alavelave, TC＝125℃，Rth (tete'e vevela ofetaulaiga imataupu）e le o aofia ai
a.Faitotoa Lisi le taimi nei: IGES=±5（μA）
e.O lo'o taofia e le tagata e aoina mai le ICES le taimi nei=250（mA）
i.Aoina mai Emitter Saturation Voltage: VCE(sat)=6(V)
o.Faitotoa Emitter Malosi'a Malolo: VGE(th)=10(V)
u.Taimi fa'aola: Tone=2.5μs
f.Taimi tape: Toff=3μs
2. Faiga: Fa'asalalau-fa'amau IGBT CSG10F2500
●Uiga eletise pe a uma ona afifi ma oomi
● Toe foʻitutusafesootaivave toe fa'aleleia diodefaaiuina
● Parameter:
Tau fa'atatau(25℃)
a.A'oa'i Emitter Voltage: VGES=2500（V）
e.Faitotoa Emitter Voltage: VCES=±20（V）
i.Aoina mai le taimi nei: IC=600（A）ICP=2000（A）
o.Fa'ate'a le Malosi a le tagata aoina: PC=4800（W）
u.Galulue vevela vevela: Tj=－40~125℃
f.Teuga vevela: Tstg=－40~125℃
Fa'ailoa: o le a fa'aleagaina le masini pe a sili atu le tau fa'atatau
EletiseCfa'alavelave, TC＝125℃，Rth (tete'e vevela ofetaulaiga imataupu）e le o aofia ai
a.Faitotoa Lisi le taimi nei: IGES=±15（μA）
e.O lo'o taofia e le tagata e aoina mai le ICES le taimi nei=25（mA）
i.Aoina mai Emitter Saturation Voltage: VCE(sat)=3.2 (V)
o.Faitotoa Emitter Aveta'avale Voltage: VGE(th)=6.3(V)
u.Taimi fa'aola: Tone=3.2μs
f.Taimi tape: Toff=9.8μs
g.Diode Malosi i luma: VF=3.2 V
h.Taimi Toe Fa'afo'i Fa'aola Diode: Trr=1.0 μs
3. Faiga: Fa'asalalau-fa'amau IGBT CSG10F4500
●Uiga eletise pe a uma ona afifi ma oomi
● Toe foʻitutusafesootaivave toe fa'aleleia diodefaaiuina
● Parameter:
Tau fa'atatau(25℃)
a.A'oa'i Emitter Voltage: VGES=4500（V）
e.Faitotoa Emitter Voltage: VCES=±20（V）
i.Aoina mai le taimi nei: IC=600（A）ICP=2000（A）
o.Fa'ato'ese le Malosi a le tagata aoina: PC=7700（W）
u.Galulue vevela vevela: Tj=－40~125℃
f.Teuga vevela: Tstg=－40~125℃
Fa'ailoa: o le a fa'aleagaina le masini pe a sili atu le tau fa'atatau
EletiseCfa'alavelave, TC＝125℃，Rth (tete'e vevela ofetaulaiga imataupu）e le o aofia ai
a.Faitotoa Lisi le taimi nei: IGES=±15（μA）
e.O lo'o taofia e le tagata e aoina mai le ICES le taimi nei=50（mA）
i.Malosi'i Tu'u le Atina'e: VCE(sat)=3.9 (V)
o.Faitotoa Emitter Aveta'avale Voltage: VGE(th)=5.2 (V)
u.Taimi fa'aola: Tone=5.5μs
f.Taimi tape: Toff=5.5μs
g.Diode Malosi i luma: VF=3.8 V
h.Taimi Toe Fa'afo'i Fa'aola Diode: Trr=2.0 μs
Fa'aaliga:O loʻo faʻaogaina le IGBT i le faʻaogaina o le masini faʻainisinia, maualuga le tetee i le faʻaleagaina ma uiga o le lomitusi faʻafesoʻotaʻi fausaga, e faigofie ona faʻaaogaina i masini faʻasologa, ma faʻatusatusa i le masani GTO thyristor, IGBT o le auala eletise eletise. .O le mea lea, e faigofie ona faʻaogaina, saogalemu ma lautele faʻaogaina faʻaogaina.